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RT1A050ZP
Electrical characteristics (Ta=25 ° C)
Data Sheet
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS = ± 10V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
? 12
?
?
V
I D = ? 1mA, V GS =0V
?
Zero gete voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I DSS
V GS (th)
R DS (on) ?
Y fs ?
C iss
C oss
C rss
t d (on) ?
t r ?
t d (off) ?
t f
?
? 0.3
?
?
?
?
7
?
?
?
?
?
?
?
?
?
19
26
34
48
?
2800
340
310
12
95
410
220
? 1
? 1.0
26
36
50
96
?
?
?
?
?
?
?
?
μ A
V
m ?
m ?
m ?
m ?
S
pF
pF
pF
ns
ns
ns
ns
V DS = ? 12V, V GS =0V
V DS = ? 6V, I D = ? 1mA
I D = ? 5A, V GS = ? 4.5V
I D = ? 2.5A, V GS = ? 2.5V
I D = ? 2.5A, V GS = ? 1.8V
I D = ? 1A, V GS = ? 1.5V
V DS = ? 6V, I D = ? 5A
V DS = ? 6V
V GS =0V
f=1MHz
V DD ? 6V
I D = ? 2.5A
V GS = ? 4.5V
R L 2.4 ?
R G =10 ?
Total gate charge
Q g ?
?
34
?
nC
V DD
? 6V
R L 1.2 ?
Gate-source charge
Gate-drain charge
Q gs ?
Q gd ?
?
?
6.0
5.0
?
?
nC
nC
I D = ? 5A
V GS = ? 4.5V
R G =10 ?
? Pulsed
Body diode characteristics (Source -drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
? 1.2
Unit
V
Conditions
I S = ? 5A, V GS =0V
? Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.01 - Rev.A
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